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VBsemi Elec IPW60R099C7XKSA1-VB product image
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VBsemi Elec IPW60R099C7XKSA1-VB

Hersteller
VBsemi ElecAsian Brands
Herst.-Teilenr.
IPW60R099C7XKSA1-VB
LCSC-Nr.
C50387018
Verp.
TO-247
Kundennummer
Hauptmerkm.
MOSFET N-CH 600V TO-247
DatenblattVBsemi Elec IPW60R099C7XKSA1-VB
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerVBsemi Elec
Verp.TO-247
Drain to Source Voltage600V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)20A
Output Capacitance(Coss)330pF
Ciss-Input Capacitance2.3nF
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss)4pF
RDS(on)160mΩ@10V
Number1 N-channel
Gate Charge(Qg)62nC@10V
Gate Threshold Voltage (Vgs(th))4.5V
TypeN-Channel

Merkmale

KI-Übersetzung
  • Low figure of merit (FOM) Ron×Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra-low gate charge (Qg)
  • Avalanche energy rated (UIS)

Anwendungen

KI-Übersetzung
  • Server and telecom power supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • Lighting
  • High Intensity Discharge (HID) lamps
  • Fluorescent lamp ballast lighting