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EDA-ModelleEasyEDA
WPMtek WTM30N65AP
| Hersteller | WPMtekAsian Brands |
| Herst.-Teilenr. | WTM30N65AP |
| LCSC-Nr. | C48642347 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 30A TO-220 |
| Datenblatt | WPMtek WTM30N65AP |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Ciss-Input Capacitance | 2.84nF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Ciss-Input Capacitance | 2.84nF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
ESN7534 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent drain-to-source on-resistance (RDS(ON)) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN7534 is lead-free.
Merkmale
KI-Übersetzung
- Drain-source breakdown voltage (BV\textDSS) = 650V, drain current (ID) = 30A
- On-resistance (RDS(on)): 0.130 Ω (max), gate-source voltage (V\textGS) = 10V
- Ultra-low figure of merit (FOM) (RDS(on) x Qg)
- Ultra-low switching losses
- Excellent stability and consistency
- 100% avalanche tested
- Built-in ESD diode
Anwendungen
KI-Übersetzung
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC-DC Converters
- Telecom, Solar
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.5797 | $ 1.58 |
| 10+ | $ 1.3181 | $ 13.18 |
| 50+ | $ 1.1749 | $ 58.75 |
| 100+ | $ 1.012 | $ 101.20 |
| 500+ | $ 0.9396 | $ 469.80 |
| 1,000+ | $ 0.9083 | $ 908.30 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Ciss-Input Capacitance | 2.84nF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Ciss-Input Capacitance | 2.84nF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
ESN7534 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent drain-to-source on-resistance (RDS(ON)) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN7534 is lead-free.
Merkmale
KI-Übersetzung
- Drain-source breakdown voltage (BV\textDSS) = 650V, drain current (ID) = 30A
- On-resistance (RDS(on)): 0.130 Ω (max), gate-source voltage (V\textGS) = 10V
- Ultra-low figure of merit (FOM) (RDS(on) x Qg)
- Ultra-low switching losses
- Excellent stability and consistency
- 100% avalanche tested
- Built-in ESD diode
Anwendungen
KI-Übersetzung
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC-DC Converters
- Telecom, Solar
C48642347 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| WTM40N65AP | WPMtek | Ähnliche | TO-220 | 6 | $ 2.0367 |