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Zdjęcia poglądowe
Modele EDAEasyEDA
TWGMC TW4805B
| Producent | TWGMCAsian Brands |
| Nr części prod. | TW4805B |
| Nr LCSC | C42417419 |
| Opak. | SOP-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 30V 8.5A SOP-8 |
| Karta Katalogowa | TWGMC TW4805B |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TWGMC | |
| Opak. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Ciss-Input Capacitance | 982pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TWGMC | |
| Opak. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Ciss-Input Capacitance | 982pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Funkcje
Tłumaczenie AI
- The TTWW44880055BB is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
- The TT、WW44880055BB meet the RoHS and Green
Zastosowania
Tłumaczenie AI
- Notebook computers
- Load switches
- LED applications
- Handheld devices
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 500
500 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1499$ 0.1425 | $ 0.71 |
| 50+ | $ 0.1195$ 0.1136 | $ 5.68 |
| 150+ | $ 0.1043$ 0.0991 | $ 14.87 |
| 500+ | $ 0.0929$ 0.0883 | $ 44.15 |
| 3,000+ | $ 0.0838$ 0.0797 | $ 239.10 |
| 6,000+ | $ 0.0792$ 0.0753 | $ 451.80 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TWGMC | |
| Opak. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Ciss-Input Capacitance | 982pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TWGMC | |
| Opak. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Ciss-Input Capacitance | 982pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Funkcje
Tłumaczenie AI
- The TTWW44880055BB is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
- The TT、WW44880055BB meet the RoHS and Green
Zastosowania
Tłumaczenie AI
- Notebook computers
- Load switches
- LED applications
- Handheld devices
C42417419 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |