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EDA-ModelleEasyEDA
VBsemi Elec VBE1303
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | VBE1303 |
| LCSC-Nr. | C416251 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 100A TO-252 |
| Datenblatt | VBsemi Elec VBE1303 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 103nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 103nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR gate
- Server
- DC/DC
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 103nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 103nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR gate
- Server
- DC/DC
C416251 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |