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ST STP4NK80Z

Produttore
ST
Cod. Prod.
STP4NK80Z
Cod. LCSC
C411401
Imballo
TO-220
Numero Cliente
Attr. chiave
MOSFET N-CH 800V 3A TO-220
Scheda TecnicaST STP4NK80Z
Conformità RoHS3 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreST
ImballoTO-220
Output Capacitance(Coss)67pF
Ciss-Input Capacitance575pF
Pd - Power Dissipation80W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Reverse Transfer Capacitance (Crss)13pF
RDS(on)3.5Ω@10V
Number1 N-channel
Gate Charge(Qg)22.5nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4.5V
TypeN-Channel
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Descrizione

Traduzione AI

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Caratteristiche

Traduzione AI
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applicazioni

Traduzione AI
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