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Zdjęcia poglądowe
Modele EDAEasyEDA
MDD(Microdiode Semiconductor) MMBT3906
| Producent | MDD(Microdiode Semiconductor)Asian Brands |
| Nr części prod. | MMBT3906 |
| Nr LCSC | C364311 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | TRANS PNP 40V 200mA SOT-23 |
| Karta Katalogowa | MDD(Microdiode Semiconductor) MMBT3906 |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
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C364311 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |