- Pinbelegung
- Footprint
Infineon GS61008P-MR
| Hersteller | |
| Herst.-Teilenr. | GS61008P-MR |
| LCSC-Nr. | C33302204 |
| Verp. | SMD-4P,7.6x4.6mm |
| Kundennummer | |
| Hauptmerkm. | Bottom-side cooled 100V E-mode GaN transistor |
| Datenblatt | Infineon GS61008P-MR |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SMD-4P,7.6x4.6mm | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 90A | |
| Ciss-Input Capacitance | 600pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SMD-4P,7.6x4.6mm | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 90A | |
| Ciss-Input Capacitance | 600pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
Beschreibung
The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Island Technology cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Merkmale
- 100 V enhancement mode power-transistor
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance GaN PX package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (- 20 V / + 10 V)
- Very high switching frequency (>10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.6 × 4.6 mm² PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6 + 4) compliant
Anwendungen
- Energy Storage Systems
- AC-DC Converters (secondary side)
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Fast Battery Charging
- Class D Audio amplifiers
- Traction Drive
- Robotics
- Wireless Power Transfer
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SMD-4P,7.6x4.6mm | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 90A | |
| Ciss-Input Capacitance | 600pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SMD-4P,7.6x4.6mm | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 90A | |
| Ciss-Input Capacitance | 600pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
Beschreibung
The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Island Technology cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Merkmale
- 100 V enhancement mode power-transistor
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance GaN PX package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (- 20 V / + 10 V)
- Very high switching frequency (>10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.6 × 4.6 mm² PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6 + 4) compliant
Anwendungen
- Energy Storage Systems
- AC-DC Converters (secondary side)
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Fast Battery Charging
- Class D Audio amplifiers
- Traction Drive
- Robotics
- Wireless Power Transfer
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |