Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FDD6670AL_NL
| Hersteller | |
| Herst.-Teilenr. | FDD6670AL_NL |
| LCSC-Nr. | C3290917 |
| Verp. | TO-252(DPAK) |
| Kundennummer | |
| Hauptmerkm. | 30V 84A 100W 6mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FDD6670AL_NL |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 930pF | |
| Current - Continuous Drain(Id) | 84A | |
| Ciss-Input Capacitance | 3.845nF | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss) | 368pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 930pF | |
| Current - Continuous Drain(Id) | 84A | |
| Ciss-Input Capacitance | 3.845nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss) | 368pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Merkmale
KI-Übersetzung
- 84 A, 30 V, RDS(ON) = 5 mΩ (at VGS = 10 V)
- RDS(ON) = 6 mΩ (at VGS = 4.5 V)
- Low gate charge
- Fast switching
- High-performance trench technology for ultra-low RDS(ON)
Anwendungen
KI-Übersetzung
- DC/DC converters
- Motor drivers
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.1156 | $ 1.12 |
| 200+ | $ 0.4321 | $ 86.42 |
| 500+ | $ 0.4167 | $ 208.35 |
| 1,000+ | $ 0.4089 | $ 408.90 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 930pF | |
| Current - Continuous Drain(Id) | 84A | |
| Ciss-Input Capacitance | 3.845nF | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss) | 368pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 930pF | |
| Current - Continuous Drain(Id) | 84A | |
| Ciss-Input Capacitance | 3.845nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss) | 368pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Merkmale
KI-Übersetzung
- 84 A, 30 V, RDS(ON) = 5 mΩ (at VGS = 10 V)
- RDS(ON) = 6 mΩ (at VGS = 4.5 V)
- Low gate charge
- Fast switching
- High-performance trench technology for ultra-low RDS(ON)
Anwendungen
KI-Übersetzung
- DC/DC converters
- Motor drivers
C3290917 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| AOD4132 | AOS | Ähnliche | TO-252-2(DPAK) | 19 | $ 0.7818 | ||
| BRD100N03 | BLUE ROCKET | Ähnliche | TO-252 | 455 | $ 0.1981 | ||
| IPD90N04S4-03 | Infineon | Ähnliche | TO-252-3 | 346 | $0.3533 $1.1775 | ||
| DMTH6005LK3-13 | DIODES | Ähnliche | TO-252(DPAK) | 2 | $ 1.0334 | ||
| TK5R1P08QM,RQ | TOSHIBA | Ähnliche | DPAK | 50 | $1.9215 $2.2875 |