MICROCHIP APT6010JFLL
| Produttore | |
| Cod. Prod. | APT6010JFLL |
| Cod. LCSC | C3278306 |
| Imballo | SOT-227B-4 |
| Numero Cliente | |
| Attr. chiave | 335W 600V 19A 370mΩ@10V 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | MICROCHIP APT6010JFLL |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-227B-4 | |
| Output Capacitance(Coss) | 325pF | |
| Ciss-Input Capacitance | 3.55nF | |
| Pd - Power Dissipation | 335W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 370mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-227B-4 | |
| Output Capacitance(Coss) | 325pF | |
| Ciss-Input Capacitance | 3.55nF | |
| Pd - Power Dissipation | 335W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 19A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 370mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Descrizione
Power MOS is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery characteristics, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Caratteristiche
- Fast switching, low EMI
- Low reverse recovery time (trr), high reliability
- Ultra-low Crss, enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applicazioni
- Zero Voltage Switching (ZVS) phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 56.0763 | $ 56.08 |
| 200+ | $ 21.7004 | $ 4340.08 |
| 500+ | $ 20.9382 | $ 10469.10 |
| 1,000+ | $ 20.5617 | $ 20561.70 |
Package Standard1/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-227B-4 | |
| Output Capacitance(Coss) | 325pF | |
| Ciss-Input Capacitance | 3.55nF | |
| Pd - Power Dissipation | 335W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 370mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-227B-4 | |
| Output Capacitance(Coss) | 325pF | |
| Ciss-Input Capacitance | 3.55nF | |
| Pd - Power Dissipation | 335W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 19A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 370mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Descrizione
Power MOS is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery characteristics, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Caratteristiche
- Fast switching, low EMI
- Low reverse recovery time (trr), high reliability
- Ultra-low Crss, enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applicazioni
- Zero Voltage Switching (ZVS) phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| IXFN150N65X2 | Littelfuse/IXYS | Simili | SOT-227B | 20 | $ 59.0347 | ||
| IXFN70N60Q2 | Littelfuse/IXYS | Simili | SOT-227B | 5 | $59.8213 $71.2158 | ||
| STE145N65M5 | ST | Simili | ISOTOP | 44 | $ 30.4478 | ||
| IXFN82N60P | Littelfuse/IXYS | Simili | SOT-227B | 6 | $ 51.5397 | ||
| IXFN32N80P | Littelfuse/IXYS | Simili | SOT-227B | 30 | $ 22.5789 |