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Littelfuse/IXYS IXYP20N120B4
| Producent | |
| Nr części prod. | IXYP20N120B4 |
| Nr LCSC | C3193401 |
| Opak. | TO-220 |
| Numer Klienta | |
| Klucz. cechy | 375W 76A 1.2kV TO-220 Single IGBTs RoHS |
| Karta Katalogowa | Littelfuse/IXYS IXYP20N120B4 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 3 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-220 | |
| Td(off) | 200ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 76A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 890pF | |
| Output Capacitance(Coes) | 58pF | |
| Gate Charge(Qg) | 44nC@600V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-220 | |
| Td(off) | 200ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 76A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 890pF | |
| Output Capacitance(Coes) | 58pF | |
| Gate Charge(Qg) | 44nC@600V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Ultra-light punch-through IGBT for switching frequencies up to 5–30kHz
Funkcje
Tłumaczenie AI
- Optimized for 5–30kHz switching frequency
- Positive temperature coefficient of Vce(sat)
- Industry-standard package
- High power density
- Low gate drive requirements
Zastosowania
Tłumaczenie AI
- Power inverters
- Uninterruptible power supplies
- Motor drives
- Switching power supplies
- Battery chargers
- Welding machines
- Lamp ballasts
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 6.3866 | $ 6.39 |
| 300+ | $ 2.4716 | $ 741.48 |
| 600+ | $ 2.3852 | $ 1431.12 |
| 900+ | $ 2.342 | $ 2107.80 |
Standardowa Obudowa300/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-220 | |
| Td(off) | 200ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 76A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 890pF | |
| Output Capacitance(Coes) | 58pF | |
| Gate Charge(Qg) | 44nC@600V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-220 | |
| Td(off) | 200ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 76A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 890pF | |
| Output Capacitance(Coes) | 58pF | |
| Gate Charge(Qg) | 44nC@600V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Ultra-light punch-through IGBT for switching frequencies up to 5–30kHz
Funkcje
Tłumaczenie AI
- Optimized for 5–30kHz switching frequency
- Positive temperature coefficient of Vce(sat)
- Industry-standard package
- High power density
- Low gate drive requirements
Zastosowania
Tłumaczenie AI
- Power inverters
- Uninterruptible power supplies
- Motor drives
- Switching power supplies
- Battery chargers
- Welding machines
- Lamp ballasts
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| AUIRGDC0250 | Infineon | Podobne | TO-220 | 40 | $ 14.9905 | ||
| IXYP20N120A4 | Littelfuse/IXYS | Podobne | TO-220 | 0 | $ 6.3882 | ||
| IXYP30N120A4 | Littelfuse/IXYS | Podobne | TO-220 | 0 | $ 7.3129 |