Littelfuse/IXYS IXGK100N170
| Produttore | |
| Cod. Prod. | IXGK100N170 |
| Cod. LCSC | C3171346 |
| Imballo | TO-264-3(TO-264AA) |
| Numero Cliente | |
| Attr. chiave | 830W 170A 1.7kV TO-264-3(TO-264AA) Single IGBTs RoHS |
| Scheda Tecnica | Littelfuse/IXYS IXGK100N170 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Littelfuse/IXYS | |
| Imballo | TO-264-3(TO-264AA) | |
| Td(off) | 285ns | |
| Pd - Power Dissipation | 830W | |
| Td(on) | 35ns | |
| Current - Collector(Ic) | 170A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 150pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,100A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 3V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 9.2nF | |
| Output Capacitance(Coes) | 455pF | |
| Gate Charge(Qg) | 425nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Littelfuse/IXYS | |
| Imballo | TO-264-3(TO-264AA) | |
| Td(off) | 285ns | |
| Pd - Power Dissipation | 830W | |
| Td(on) | 35ns | |
| Current - Collector(Ic) | 170A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 150pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,100A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 3V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 9.2nF | |
| Output Capacitance(Coes) | 455pF | |
| Gate Charge(Qg) | 425nC |
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Caratteristiche
Traduzione AI
- Optimized for low conduction and switching losses
- Short-circuit capability
- High current handling capability
- High power density
- Low gate drive requirements
Applicazioni
Traduzione AI
- Power inverters
- Uninterruptible power supplies
- Motor drives
- Switching power supplies
- Power factor correction circuits
- Welding machines
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Littelfuse/IXYS | |
| Imballo | TO-264-3(TO-264AA) | |
| Td(off) | 285ns | |
| Pd - Power Dissipation | 830W | |
| Td(on) | 35ns | |
| Current - Collector(Ic) | 170A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 150pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,100A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 3V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 9.2nF | |
| Output Capacitance(Coes) | 455pF | |
| Gate Charge(Qg) | 425nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Littelfuse/IXYS | |
| Imballo | TO-264-3(TO-264AA) | |
| Td(off) | 285ns | |
| Pd - Power Dissipation | 830W | |
| Td(on) | 35ns | |
| Current - Collector(Ic) | 170A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 150pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,100A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 3V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 9.2nF | |
| Output Capacitance(Coes) | 455pF | |
| Gate Charge(Qg) | 425nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Optimized for low conduction and switching losses
- Short-circuit capability
- High current handling capability
- High power density
- Low gate drive requirements
Applicazioni
Traduzione AI
- Power inverters
- Uninterruptible power supplies
- Motor drives
- Switching power supplies
- Power factor correction circuits
- Welding machines
C3171346 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



