Winsok Semicon WSD75N12GDN56
| Produttore | Winsok SemiconAsian Brands |
| Cod. Prod. | WSD75N12GDN56 |
| Cod. LCSC | C2990864 |
| Imballo | DFN5X6-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET 120V 75A DFN5X6-8 |
| Scheda Tecnica | Winsok Semicon WSD75N12GDN56 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5X6-8 | |
| Output Capacitance(Coss) | 429pF | |
| Ciss-Input Capacitance | 4.282nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61.4nC@0~10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5X6-8 | |
| Output Capacitance(Coss) | 429pF | |
| Ciss-Input Capacitance | 4.282nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 75A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61.4nC@0~10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WSD75N12GDN56 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Applicazioni
Traduzione AI
- DC/DC Converter
- Load switch
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5X6-8 | |
| Output Capacitance(Coss) | 429pF | |
| Ciss-Input Capacitance | 4.282nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61.4nC@0~10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5X6-8 | |
| Output Capacitance(Coss) | 429pF | |
| Ciss-Input Capacitance | 4.282nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 75A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61.4nC@0~10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WSD75N12GDN56 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Applicazioni
Traduzione AI
- DC/DC Converter
- Load switch
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
