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EDA-ModelleEasyEDA
PJSEMI MMBT8050C-1.5A
| Hersteller | PJSEMIAsian Brands |
| Herst.-Teilenr. | MMBT8050C-1.5A |
| LCSC-Nr. | C2977364 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | TRANS NPN 25V 1.5A SOT-23 |
| Datenblatt | PJSEMI MMBT8050C-1.5A |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | PJSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 120MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 1.5A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | PJSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 120MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 1.5A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
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Merkmale
KI-Übersetzung
- For Switching and AF Amplifer Applications.
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | PJSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 120MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 1.5A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | PJSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 120MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 1.5A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- For Switching and AF Amplifer Applications.
C2977364 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |