Infineon/CYPRESS CY62128DV30L-70SI
| Hersteller | |
| Herst.-Teilenr. | CY62128DV30L-70SI |
| LCSC-Nr. | C2956725 |
| Verp. | SOIC-32 |
| Kundennummer | |
| Hauptmerkm. | 1Mbit Parallel Port (Parallel) SOIC-32 Memory |
| Datenblatt | Infineon/CYPRESS CY62128DV30L-70SI |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V;10mA | |
| Access Time | 70ns | |
| Standby Supply Current | 1.5uA | |
| Interface | Parallel Port (Parallel) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function |
| Typ | Beschreibung | |
|---|---|---|
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V;10mA | |
| Access Time | 70ns | |
| Standby Supply Current | 1.5uA | |
| Interface | Parallel Port (Parallel) |
Beschreibung
The CY62128DV30 is a high-performance CMOS static RAM organized as 128K words × 8 bits. This device employs advanced circuit design to deliver ultra-low operating current, making it ideal for extending battery life in portable applications such as mobile phones. The device also features automatic power-down, which reduces power consumption by up to 90% when the address is not switching. When Chip Enable 1 (CE1 bar) is high or Chip Enable 2 (CE2) is low, the device enters standby mode, reducing power consumption by more than 99%. The I/O pins (I/O0 through I/O7) are placed in a high-impedance state when Chip Enable 1 (CE1 bar) is high or Chip Enable 2 (CE2) is low, when Output Disable (OE is high), or during a write operation (Chip Enable 1 (CE1 bar) is low, Chip Enable 2 (CE2) is high, and Write Enable (WE) is low). To write data to the device, Chip Enable 1 (CE1 bar) must be driven low, Chip Enable 2 (CE2) high, and Write Enable (WE) low; data present on the 8 I/O pins is then written to the location specified by address pins A0 through A16. To read data from the device, Chip Enable 1 (CE1 bar) must be driven low, Chip Enable 2 (CE2) high, Output Enable (OE) low, and Write Enable (WE) high; under these conditions, the contents of the memory cell specified by the address pins appear on the I/O pins.
Merkmale
- Ultra-high speed: 55 and 70 ns
- Wide voltage range: 2.2V to 3.6V
- Pin-compatible with CY62128V
- Ultra-low active power consumption Active current: 0.85 mA typical at f = 1 MHz Active current: 5 mA typical at f = fMAX
- Ultra-low standby power consumption
- Easy memory expansion via CE1, CE2, and OE functions Automatic power-down when deselected
- Available in lead-free and leaded 32-pin SOIC, 32-pin TSOP, and 32-pin small TSOP packages, and leaded 32-pin reverse TSOP package
Anwendungen
- Portable applications
- Mobile phones
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V;10mA | |
| Access Time | 70ns | |
| Standby Supply Current | 1.5uA | |
| Interface | Parallel Port (Parallel) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function |
| Typ | Beschreibung | |
|---|---|---|
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V;10mA | |
| Access Time | 70ns | |
| Standby Supply Current | 1.5uA | |
| Interface | Parallel Port (Parallel) |
Beschreibung
The CY62128DV30 is a high-performance CMOS static RAM organized as 128K words × 8 bits. This device employs advanced circuit design to deliver ultra-low operating current, making it ideal for extending battery life in portable applications such as mobile phones. The device also features automatic power-down, which reduces power consumption by up to 90% when the address is not switching. When Chip Enable 1 (CE1 bar) is high or Chip Enable 2 (CE2) is low, the device enters standby mode, reducing power consumption by more than 99%. The I/O pins (I/O0 through I/O7) are placed in a high-impedance state when Chip Enable 1 (CE1 bar) is high or Chip Enable 2 (CE2) is low, when Output Disable (OE is high), or during a write operation (Chip Enable 1 (CE1 bar) is low, Chip Enable 2 (CE2) is high, and Write Enable (WE) is low). To write data to the device, Chip Enable 1 (CE1 bar) must be driven low, Chip Enable 2 (CE2) high, and Write Enable (WE) low; data present on the 8 I/O pins is then written to the location specified by address pins A0 through A16. To read data from the device, Chip Enable 1 (CE1 bar) must be driven low, Chip Enable 2 (CE2) high, Output Enable (OE) low, and Write Enable (WE) high; under these conditions, the contents of the memory cell specified by the address pins appear on the I/O pins.
Merkmale
- Ultra-high speed: 55 and 70 ns
- Wide voltage range: 2.2V to 3.6V
- Pin-compatible with CY62128V
- Ultra-low active power consumption Active current: 0.85 mA typical at f = 1 MHz Active current: 5 mA typical at f = fMAX
- Ultra-low standby power consumption
- Easy memory expansion via CE1, CE2, and OE functions Automatic power-down when deselected
- Available in lead-free and leaded 32-pin SOIC, 32-pin TSOP, and 32-pin small TSOP packages, and leaded 32-pin reverse TSOP package
Anwendungen
- Portable applications
- Mobile phones
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

