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EDA-ModelleEasyEDA
HUASHUO HSBA3004
| Hersteller | HUASHUOAsian Brands |
| Herst.-Teilenr. | HSBA3004 |
| LCSC-Nr. | C2828500 |
| Verp. | PRPAK5x6-8L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 58A PRPAK5x6-8L |
| Datenblatt | HUASHUO HSBA3004 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 228pF | |
| Current - Continuous Drain(Id) | 58A | |
| Ciss-Input Capacitance | 1.844nF | |
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss) | 183pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 228pF | |
| Current - Continuous Drain(Id) | 58A | |
| Ciss-Input Capacitance | 1.844nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss) | 183pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
HSBA3004 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for a wide range of applications. HSBA3004 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full functional reliability qualification.
Merkmale
KI-Übersetzung
- 100% guaranteed avalanche capability (EAS)
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 2,930
2,930 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1847 | $ 0.92 |
| 50+ | $ 0.1475 | $ 7.38 |
| 150+ | $ 0.1315 | $ 19.73 |
| 500+ | $ 0.1116 | $ 55.80 |
| 3,000+ | $ 0.0915 | $ 274.50 |
| 6,000+ | $ 0.0862 | $ 517.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 228pF | |
| Current - Continuous Drain(Id) | 58A | |
| Ciss-Input Capacitance | 1.844nF | |
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss) | 183pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 228pF | |
| Current - Continuous Drain(Id) | 58A | |
| Ciss-Input Capacitance | 1.844nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss) | 183pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
HSBA3004 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for a wide range of applications. HSBA3004 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full functional reliability qualification.
Merkmale
KI-Übersetzung
- 100% guaranteed avalanche capability (EAS)
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C2828500 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |