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EDA 모델EasyEDA
ST STD13N60DM2
| 제조업체 | |
| 제조사 품번 | STD13N60DM2 |
| LCSC 번호 | C2688628 |
| 포장 | TO-252(DPAK) |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 600V 11A TO-252(DPAK) |
| 데이터시트 | ST STD13N60DM2 |
| RoHS 준수 | 3개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-252(DPAK) | |
| Output Capacitance(Coss) | 38pF | |
| Ciss-Input Capacitance | 730pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 365mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-252(DPAK) | |
| Output Capacitance(Coss) | 38pF | |
| Ciss-Input Capacitance | 730pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 11A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 365mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
주요 특징
AI 번역
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
응용 분야
AI 번역
- Switching applications
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-252(DPAK) | |
| Output Capacitance(Coss) | 38pF | |
| Ciss-Input Capacitance | 730pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 365mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-252(DPAK) | |
| Output Capacitance(Coss) | 38pF | |
| Ciss-Input Capacitance | 730pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 11A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 365mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
주요 특징
AI 번역
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
응용 분야
AI 번역
- Switching applications
C2688628 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |