VISHAY VS-E7FX0212HM3/I
| Produttore | |
| Cod. Prod. | VS-E7FX0212HM3/I |
| Cod. LCSC | C24643891 |
| Imballo | DO-219AB |
| Numero Cliente | |
| Attr. chiave | 1.2kV 1 Independent 2.5V@2A 2A DO-219AB Single Diodes RoHS |
| Scheda Tecnica | VISHAY VS-E7FX0212HM3/I |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-219AB | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 2.5V@2A | |
| Reverse Leakage Current (Ir) | 3uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-219AB | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 2.5V@2A | |
| Reverse Leakage Current (Ir) | 3uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrizione
Featuring planar construction and platinum-doped lifetime control technology to ensure optimal overall performance, ruggedness, and reliability. These devices are designed for use as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies, bootstrap and desaturation circuits for high-voltage MOSFET and IGBT drivers, and high-frequency rectifiers in Cuk and Sepic circuits for LED lighting. Their ultra-optimized stored charge and low recovery current minimize switching losses and reduce power dissipation in switching elements.
Caratteristiche
- Ultra-fast recovery time, reduced Qrr, and soft recovery characteristics
- Maximum operating junction temperature 175 °C
- Specified for output and freewheeling operations
- Low forward voltage drop
- Low leakage current
- MSL Level 1 compliant (per J-STD-020), max peak temperature 260 °C
- AEC-Q101 qualified, compliant with JESD 201 Class 2 whisker test requirements
Applicazioni
- Industrial Power Supplies
- Automotive Electronics
- Consumer Electronics
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-219AB | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 2.5V@2A | |
| Reverse Leakage Current (Ir) | 3uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-219AB | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 2.5V@2A | |
| Reverse Leakage Current (Ir) | 3uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrizione
Featuring planar construction and platinum-doped lifetime control technology to ensure optimal overall performance, ruggedness, and reliability. These devices are designed for use as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies, bootstrap and desaturation circuits for high-voltage MOSFET and IGBT drivers, and high-frequency rectifiers in Cuk and Sepic circuits for LED lighting. Their ultra-optimized stored charge and low recovery current minimize switching losses and reduce power dissipation in switching elements.
Caratteristiche
- Ultra-fast recovery time, reduced Qrr, and soft recovery characteristics
- Maximum operating junction temperature 175 °C
- Specified for output and freewheeling operations
- Low forward voltage drop
- Low leakage current
- MSL Level 1 compliant (per J-STD-020), max peak temperature 260 °C
- AEC-Q101 qualified, compliant with JESD 201 Class 2 whisker test requirements
Applicazioni
- Industrial Power Supplies
- Automotive Electronics
- Consumer Electronics
C24643891 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



