Abbildung ähnlich
EDA-ModelleEasyEDA
CBI MMBD914
| Hersteller | CBIAsian Brands |
| Herst.-Teilenr. | MMBD914 |
| LCSC-Nr. | C21714256 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | DIODE GP 100V 200mA SOT-23 |
| Datenblatt | CBI MMBD914 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | CBI | |
| Verp. | SOT-23 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Forward(Vf@If) | 1V@10mA | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 200mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | CBI | |
| Verp. | SOT-23 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | - |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Forward(Vf@If) | 1V@10mA | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 200mA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small package
- Low forward voltage
- Fast reverse recovery time
- Low total capacitance
Anwendungen
KI-Übersetzung
- Ultra-high-speed switching applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | CBI | |
| Verp. | SOT-23 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Forward(Vf@If) | 1V@10mA | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 200mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | CBI | |
| Verp. | SOT-23 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | - |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Forward(Vf@If) | 1V@10mA | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 200mA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small package
- Low forward voltage
- Fast reverse recovery time
- Low total capacitance
Anwendungen
KI-Übersetzung
- Ultra-high-speed switching applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |