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EDA-ModelleEasyEDA
JSMSEMI SME10N15-G
| Hersteller | JSMSEMIAsian Brands |
| Herst.-Teilenr. | SME10N15-G |
| LCSC-Nr. | C20616638 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 200V 9A TO-252 |
| Datenblatt | JSMSEMI SME10N15-G |
| RoHS-Konformität | 6 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 87pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 605pF | |
| Pd - Power Dissipation | 74W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 87pF | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 605pF | |
| Pd - Power Dissipation | 74W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 87pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 605pF | |
| Pd - Power Dissipation | 74W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 87pF | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 605pF | |
| Pd - Power Dissipation | 74W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
C20616638 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |