KIOXIA TH58BVG3S0HTA00

TH58BVG3S0HTA00 is a single 3.3V, 8Gb (8,858,370,048 bits) NAND Flash EEPROM organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device features a 4224-byte static register that allows program and read data transfers between the register and the memory cell array in units of 4224 bytes. Erase operations are performed on a single block basis (256KB + 8KB: 4224 bytes × 64 pages). The device is a serial-type memory that utilizes I/O pins for address and data input/output as well as command input. Erase and program operations are executed automatically, making it well-suited for solid-state file storage, voice recording, still camera image file storage, and other systems requiring high-density non-volatile memory data storage. The TH58BVG3S0HTA00 incorporates on-chip ECC logic capable of internally correcting up to 8-bit read errors per 528 bytes.

• Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi-Page Read, Multi-Page Program, Multi-Block Erase, ECC Status Read
• Mode Control: Serial I/O command control
• Valid Block Count: 4016 blocks minimum, 4096 blocks maximum
• Power Supply: VCC = 2.7 ~ 3.6 V
• Access Time: Memory cell array to register 55 μs typical (single-page read) / 90 μs typical (multi-page read); read cycle time 25 ns minimum (CL = 50pF)
• Program/Erase Time: Auto page program 340 μs/page typical; auto block erase 2.5 ms/block typical
• Operating Current: Read (25 ns cycle) 30 mA maximum; Program (average) 30 mA maximum; Erase (average) 30 mA maximum; Standby 100 μA maximum
• Package: TSOP I 48-P-1220-0.50 (weight: 0.54 g typical)
• On-chip 8-bit ECC function per 528 bytes.