Abbildung ähnlich
EDA-ModelleEasyEDA
TOSHIBA GT50J341,Q
| Hersteller | |
| Herst.-Teilenr. | GT50J341,Q |
| LCSC-Nr. | C17338091 |
| Verp. | SC-65-3 |
| Kundennummer | |
| Hauptmerkm. | 200W 50A 600V SC-65-3 Single IGBTs RoHS |
| Datenblatt | TOSHIBA GT50J341,Q |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | - | |
| Pd - Power Dissipation | 200W | |
| Td(on) | - | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 100ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | - | |
| Pd - Power Dissipation | 200W | |
| Td(on) | - | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 100ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 6th Generation
- Enhancement Mode
- High-speed switching: tf = 0.15 μs (typ.) (IC = 50 A)
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A)
- FRD included between emitter and collector
Anwendungen
KI-Übersetzung
Dedicated to current-resonant inverter switching applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.8493 | $ 3.85 |
| 200+ | $ 1.536 | $ 307.20 |
| 500+ | $ 1.4854 | $ 742.70 |
| 1,000+ | $ 1.4601 | $ 1460.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | - | |
| Pd - Power Dissipation | 200W | |
| Td(on) | - | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 100ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | - | |
| Pd - Power Dissipation | 200W | |
| Td(on) | - | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 100ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 6th Generation
- Enhancement Mode
- High-speed switching: tf = 0.15 μs (typ.) (IC = 50 A)
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A)
- FRD included between emitter and collector
Anwendungen
KI-Übersetzung
Dedicated to current-resonant inverter switching applications
C17338091 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| GT50JR22(STA1,E,S) | TOSHIBA | Ähnliche | SC-65-3 | 14 | $ 4.3394 | ||
| GT50JR22(S1WLD,E,S | TOSHIBA | Ähnliche | TO-3P-3 | 8,168 | $ 1.6736 | ||
| FGA6560WDF | onsemi | Ähnliche | TO-3PN | 519 | $ 3.0941 | ||
| MLG40N60FDL-W | Minos | Ähnliche | TO-3P | 581 | $ 1.4333 | ||
| MLG40T65FDL-W | Minos | Ähnliche | TO-3P | 584 | $ 1.2171 |