EVERLIGHT H11B2M
| Produttore | |
| Cod. Prod. | H11B2M |
| Cod. LCSC | C17320890 |
| Imballo | DIP-6 |
| Numero Cliente | |
| Attr. chiave | 1V@1mA,1mA 55V 9V 1.5V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Scheda Tecnica | EVERLIGHT H11B2M |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | EVERLIGHT | |
| Imballo | DIP-6 | |
| Rise time | 25us | |
| Fall time | 18us | |
| Vce Saturation(VCE(sat)) | 1V@1mA,1mA | |
| Operating Temperature | -55℃~+100℃ | |
| Load Voltage | 55V | |
| Reverse Voltage | 9V | |
| Voltage - Forward(Vf) | 1.5V | |
| Current transfer ratio | 200%;200% | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | Darlington output structure |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | EVERLIGHT | |
| Imballo | DIP-6 | |
| Rise time | 25us | |
| Fall time | 18us | |
| Vce Saturation(VCE(sat)) | 1V@1mA,1mA | |
| Operating Temperature | -55℃~+100℃ | |
| Load Voltage | 55V | |
| Reverse Voltage | 9V |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Forward(Vf) | 1.5V | |
| Current transfer ratio | 200%;200% | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | Darlington output structure |
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Descrizione
Traduzione AI
The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Caratteristiche
Traduzione AI
- 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33
- H11BX series: H11B1, H11B2, H11B3, H11B255
- High isolation voltage between input and output (Viso = 5000 V rms)
- Creepage distance > 7.62 mm
- Operating temperature up to +110℃
- Compact small outline package
- The product itself will remain within RoHS compliant version
- Compliance with EU REACH
- UL and cUL approved (No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved
- FIMKO approved
- CQC approved
Applicazioni
Traduzione AI
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Interfacing coupling systems of different potentials and impedances
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | EVERLIGHT | |
| Imballo | DIP-6 | |
| Rise time | 25us | |
| Fall time | 18us | |
| Vce Saturation(VCE(sat)) | 1V@1mA,1mA | |
| Operating Temperature | -55℃~+100℃ | |
| Load Voltage | 55V | |
| Reverse Voltage | 9V | |
| Voltage - Forward(Vf) | 1.5V | |
| Current transfer ratio | 200%;200% | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | Darlington output structure |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | EVERLIGHT | |
| Imballo | DIP-6 | |
| Rise time | 25us | |
| Fall time | 18us | |
| Vce Saturation(VCE(sat)) | 1V@1mA,1mA | |
| Operating Temperature | -55℃~+100℃ | |
| Load Voltage | 55V | |
| Reverse Voltage | 9V |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Forward(Vf) | 1.5V | |
| Current transfer ratio | 200%;200% | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | Darlington output structure |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Caratteristiche
Traduzione AI
- 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33
- H11BX series: H11B1, H11B2, H11B3, H11B255
- High isolation voltage between input and output (Viso = 5000 V rms)
- Creepage distance > 7.62 mm
- Operating temperature up to +110℃
- Compact small outline package
- The product itself will remain within RoHS compliant version
- Compliance with EU REACH
- UL and cUL approved (No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved
- FIMKO approved
- CQC approved
Applicazioni
Traduzione AI
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Interfacing coupling systems of different potentials and impedances
C17320890 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |

