onsemi MMBF4393LT1G
| Produttore | |
| Cod. Prod. | MMBF4393LT1G |
| Cod. LCSC | C152291 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | JFET Switching Transistors N-Channel |
| Scheda Tecnica | onsemi MMBF4393LT1G |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 14pF | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 5mA | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 100Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 14pF | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 5mA | |
| Number | 1 N-channel |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 100Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 14pF | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 5mA | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 100Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 14pF | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 5mA | |
| Number | 1 N-channel |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 100Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C152291 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



