RENESAS 71V67803S150BQ

The IDT71V67603/7803 SRAMs utilize IDT’s latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP), a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA).

• 256K x 36, 512K x 18 memory configurations
• Supports high system speed:
  • 166MHz 3.5ns clock access time
  • 150MHz 3.8ns clock access time
  • 133MHz 4.2ns clock access time
• The burst mode feature offers the highest level of performance to the system designer, as the IDT71V67603/7803 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will be pipelined for one cycle before it is available on the next rising clock edge. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin.