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EDA-ModelleEasyEDA
ST(Semtech) MMBT7002
| Hersteller | ST(Semtech)Asian Brands |
| Herst.-Teilenr. | MMBT7002 |
| LCSC-Nr. | C116031 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 115mA SOT-23 |
| Datenblatt | ST(Semtech) MMBT7002 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST(Semtech) | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST(Semtech) | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE6003Y utilizes advanced trench technology to deliver excellent drain-source on-resistance (RDS(ON)), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for battery protection or other switching applications.
Merkmale
KI-Übersetzung
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching
- High saturation current capability
- High speed switching
Anwendungen
KI-Übersetzung
- Battery Switch - DC/DC Converter
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 50
50 Ab Lager, sofort versandfertig
Minimum: 50Vielfaches: 50Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 50+ | $ 0.0186 | $ 0.93 |
| 500+ | $ 0.0143 | $ 7.15 |
| 3,000+ | $ 0.0121 | $ 36.30 |
| 6,000+ | $ 0.0107 | $ 64.20 |
| 24,000+ | $ 0.0095 | $ 228.00 |
| 51,000+ | $ 0.0088 | $ 448.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST(Semtech) | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST(Semtech) | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE6003Y utilizes advanced trench technology to deliver excellent drain-source on-resistance (RDS(ON)), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for battery protection or other switching applications.
Merkmale
KI-Übersetzung
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching
- High saturation current capability
- High speed switching
Anwendungen
KI-Übersetzung
- Battery Switch - DC/DC Converter
C116031 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| MMFTN2310 | ST(Semtech) | Ähnliche | SOT-23 | 2,950 | $ 0.0576 | ||
| MMBT7002BK | ST(Semtech) | Ähnliche | SOT-23 | 1,340 | $ 0.0184 | ||
| MMFTN123K | ST(Semtech) | Ähnliche | SOT-23 | 920 | $ 0.0249 |