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EDA-ModelleEasyEDA
onsemi NSV40301MZ4T1G
| Hersteller | |
| Herst.-Teilenr. | NSV40301MZ4T1G |
| LCSC-Nr. | C899984 |
| Verp. | SOT-223-4 |
| Kundennummer | |
| Hauptmerkm. | 40V 200 3A NPN SOT-223-4 Single Bipolar Transistors RoHS |
| Datenblatt | onsemi NSV40301MZ4T1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 215MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 3A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 215MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 3A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4152 | $ 0.42 |
| 10+ | $ 0.3566 | $ 3.57 |
| 30+ | $ 0.3273 | $ 9.82 |
| 100+ | $ 0.2979 | $ 29.79 |
| 500+ | $ 0.281 | $ 140.50 |
| 1,000+ | $ 0.2424 | $ 242.40 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 215MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 3A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 215MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 3A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
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C899984 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NJT4031NT1G | onsemi | Direkt | SOT-223 | 7 | $ 0.5095 | ||
| NJV4031NT1G | onsemi | Direkt | SOT-223 | 30 | $0.1802 $1.0006 | ||
| NSS40301MZ4T1G | onsemi | Direkt | SOT-223 | 888 | $ 0.4977 | ||
| DJT4031N-13 | DIODES | Direkt | SOT-223 | 0 | $ 0.3189 |