Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi H11G1SR2VM
| Producent | |
| Nr części prod. | H11G1SR2VM |
| Nr LCSC | C899467 |
| Opak. | SMD-6P |
| Numer Klienta | |
| Klucz. cechy | 850mV@50mA,16mA 100V 6V 1.3V DC SMD-6P Transistor, Photovoltaic Output Optoisolators RoHS |
| Karta Katalogowa | onsemi H11G1SR2VM |
| Zgodność z RoHS | 4 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Producent | onsemi | |
| Opak. | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Voltage - Forward(Vf) | 1.3V | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
| Typ | Opis | |
|---|---|---|
| Kategoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Producent | onsemi | |
| Opak. | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ |
| Typ | Opis | |
|---|---|---|
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Voltage - Forward(Vf) | 1.3V | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Funkcje
Tłumaczenie AI
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Zastosowania
Tłumaczenie AI
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5579 | $ 0.56 |
| 200+ | $ 0.2161 | $ 43.22 |
| 500+ | $ 0.208 | $ 104.00 |
| 1,000+ | $ 0.2048 | $ 204.80 |
Standardowa Obudowa1000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Producent | onsemi | |
| Opak. | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Voltage - Forward(Vf) | 1.3V | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
| Typ | Opis | |
|---|---|---|
| Kategoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Producent | onsemi | |
| Opak. | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ |
| Typ | Opis | |
|---|---|---|
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Voltage - Forward(Vf) | 1.3V | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Funkcje
Tłumaczenie AI
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Zastosowania
Tłumaczenie AI
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
C899467 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |