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Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDMC2610
| Producent | |
| Nr części prod. | FDMC2610 |
| Nr LCSC | C890928 |
| Opak. | WDFN-8(3.3x3.3) |
| Numer Klienta | |
| Klucz. cechy | 42W 200V 9.5A 200mΩ 1 N-channel N-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi FDMC2610 |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 4 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 960pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 200mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 960pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.5A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 200mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET utilizes Fairchild Semiconductor's advanced power trench process with a rugged gate structure. It is optimized for power management applications.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 200 mΩ at VGS = 10 V, ID = 2.2 A
- Maximum rDS(on) = 215 mΩ at VGS = 6 V, ID = 1.5 A
- Low profile — Power 33 package maximum height 1 mm
- RoHS compliant
Zastosowania
Tłumaczenie AI
- DC-DC conversion
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 960pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 200mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 960pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.5A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 200mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET utilizes Fairchild Semiconductor's advanced power trench process with a rugged gate structure. It is optimized for power management applications.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 200 mΩ at VGS = 10 V, ID = 2.2 A
- Maximum rDS(on) = 215 mΩ at VGS = 6 V, ID = 1.5 A
- Low profile — Power 33 package maximum height 1 mm
- RoHS compliant
Zastosowania
Tłumaczenie AI
- DC-DC conversion
C890928 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |