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EDA-ModelleEasyEDA
TOSHIBA SSM3J377R,LXHF
| Hersteller | |
| Herst.-Teilenr. | SSM3J377R,LXHF |
| LCSC-Nr. | C7369985 |
| Verp. | SOT-23F |
| Kundennummer | |
| Hauptmerkm. | 20V 3.9A 1W 93mΩ@4.5V 1 P-Channel SOT-23F Single FETs, MOSFETs RoHS |
| Datenblatt | TOSHIBA SSM3J377R,LXHF |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.9A | |
| Ciss-Input Capacitance | 290pF | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 93mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.9A | |
| Ciss-Input Capacitance | 290pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| RDS(on) | 93mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
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Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using sixth-generation STripFET™ DeepGATE™ technology, featuring a new gate structure. The resulting power MOSFET delivers the lowest on-state resistance (RDS(on)) across all package types.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- 1.5-V gate drive voltage
- Low drain-to-source on-resistance: RDS(ON) = 240 mΩ (max) (VGS = -1.5 V); RDS(ON) = 168 mΩ (max) (VGS = -1.8 V); RDS(ON) = 123 mΩ (max) (VGS = -2.5 V); RDS(ON) = 93 mΩ (max) (VGS = -4.5 V)
Anwendungen
KI-Übersetzung
- Power management switch
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5179 | $ 0.52 |
| 10+ | $ 0.5097 | $ 5.10 |
| 30+ | $ 0.5048 | $ 15.14 |
| 100+ | $ 0.4982 | $ 49.82 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.9A | |
| Ciss-Input Capacitance | 290pF | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 93mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.9A | |
| Ciss-Input Capacitance | 290pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| RDS(on) | 93mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using sixth-generation STripFET™ DeepGATE™ technology, featuring a new gate structure. The resulting power MOSFET delivers the lowest on-state resistance (RDS(on)) across all package types.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- 1.5-V gate drive voltage
- Low drain-to-source on-resistance: RDS(ON) = 240 mΩ (max) (VGS = -1.5 V); RDS(ON) = 168 mΩ (max) (VGS = -1.8 V); RDS(ON) = 123 mΩ (max) (VGS = -2.5 V); RDS(ON) = 93 mΩ (max) (VGS = -4.5 V)
Anwendungen
KI-Übersetzung
- Power management switch
C7369985 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| SSM3J327R,LF | TOSHIBA | Ähnliche | SOT-23F | 1,790 | $ 0.1002 | ||
| SSM3J328R,LF | TOSHIBA | Ähnliche | SOT-23F | 190 | $ 0.0634 | ||
| LP3415ELT1G | LRC | Ähnliche | SOT-23 | 3,170 | $ 0.0668 | ||
| WST6225 | Winsok Semicon | Ähnliche | SOT-23-3L | 3,660 | $0.0486 $0.0539 | ||
| WST3325 | Winsok Semicon | Ähnliche | SOT-23-3L | 1,850 | $0.0732 $0.0813 |