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HUASHUO HSBB3115
| 제조업체 | HUASHUOAsian Brands |
| 제조사 품번 | HSBB3115 |
| LCSC 번호 | C701040 |
| 포장 | PRPAK3x3-8L |
| 고객 번호 | |
| 주요 제원 | MOSFET P-CH 30V 55A PRPAK3x3-8L |
| 데이터시트 | HUASHUO HSBB3115 |
| RoHS 준수 | 1개 문서 이용 가능 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HUASHUO | |
| 포장 | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 3.448nF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 421pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 30nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HUASHUO | |
| 포장 | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 3.448nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 421pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 30nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
HSBB3115 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB3115 complies with RoHS and green product requirements, with 100% guaranteed EAS certified through comprehensive functional reliability qualification.
주요 특징
AI 번역
- 100% guaranteed EAS
- Green device available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HUASHUO | |
| 포장 | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 3.448nF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 421pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 30nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HUASHUO | |
| 포장 | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 3.448nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 421pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 30nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
HSBB3115 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB3115 complies with RoHS and green product requirements, with 100% guaranteed EAS certified through comprehensive functional reliability qualification.
주요 특징
AI 번역
- 100% guaranteed EAS
- Green device available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C701040 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |