Nexperia PMV52ENEAR
| Produttore | |
| Cod. Prod. | PMV52ENEAR |
| Cod. LCSC | C547262 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 30V 3.2A SOT-23 |
| Scheda Tecnica | Nexperia PMV52ENEAR |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 630mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 630mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Caratteristiche
Traduzione AI
- Logic-level compatible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 630mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 630mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Caratteristiche
Traduzione AI
- Logic-level compatible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
C547262 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



