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EDA-ModelleEasyEDA
MICRONE MEM2310M3G
| Hersteller | MICRONEAsian Brands |
| Herst.-Teilenr. | MEM2310M3G |
| LCSC-Nr. | C489595 |
| Verp. | SOT-23-3L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 5.8A SOT-23-3L |
| Datenblatt | MICRONE MEM2310M3G |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICRONE | |
| Verp. | SOT-23-3L | |
| Output Capacitance(Coss) | 99pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 37mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@15V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICRONE | |
| Verp. | SOT-23-3L | |
| Output Capacitance(Coss) | 99pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 37mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@15V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
MEM2310M3G Series N-channel enhancement mode f ield-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
Merkmale
KI-Übersetzung
- 30V/5.8A
- RDS(ON)=25mΩ@VGS=10V, lD=5.8A
- RDS(ON)=28mΩ@VGS=4.5V, lD=5A
- RDS(ON)=37mΩ@VGS=2.5V, lD=4A
- High Density Cell Design For Ultra Low On-Resistance
- Subminiature surface mount package: SOT23-3L
Anwendungen
KI-Übersetzung
- Battery management
- High speed switch
- Low power DC to DC converter
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100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICRONE | |
| Verp. | SOT-23-3L | |
| Output Capacitance(Coss) | 99pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 37mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@15V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICRONE | |
| Verp. | SOT-23-3L | |
| Output Capacitance(Coss) | 99pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 37mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@15V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
MEM2310M3G Series N-channel enhancement mode f ield-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
Merkmale
KI-Übersetzung
- 30V/5.8A
- RDS(ON)=25mΩ@VGS=10V, lD=5.8A
- RDS(ON)=28mΩ@VGS=4.5V, lD=5A
- RDS(ON)=37mΩ@VGS=2.5V, lD=4A
- High Density Cell Design For Ultra Low On-Resistance
- Subminiature surface mount package: SOT23-3L
Anwendungen
KI-Übersetzung
- Battery management
- High speed switch
- Low power DC to DC converter
C489595 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |