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Zdjęcia poglądowe
Modele EDAEasyEDA
VBsemi Elec VBC7P2216
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | VBC7P2216 |
| Nr LCSC | C480942 |
| Opak. | TSSOP-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 20V 9A TSSOP-8 |
| Karta Katalogowa | VBsemi Elec VBC7P2216 |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TSSOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 10mΩ@4.5V;12mΩ@2.5V;16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 46nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TSSOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 10mΩ@4.5V;12mΩ@2.5V;16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 46nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
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Funkcje
Tłumaczenie AI
- Halogen-Free Trench Power MOSFET
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TSSOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 10mΩ@4.5V;12mΩ@2.5V;16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 46nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TSSOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 10mΩ@4.5V;12mΩ@2.5V;16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 46nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-Free Trench Power MOSFET
C480942 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |