LGE MMBT2907A
| Producent | LGEAsian Brands |
| Nr części prod. | MMBT2907A |
| Nr LCSC | C402271 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | TRANS PNP 60V 600mA SOT-23 |
| Karta Katalogowa | LGE MMBT2907A |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | LGE | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 300mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | LGE | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 300mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Epitaxial planar die construction.
- Complementary NPN type available MMBT2222A.
- Ideal for medium power amplification and switching.
Zastosowania
Tłumaczenie AI
- This device is designed as a general purpose amplifier and switching.
- The useful dynamic range extends to 600mA as a switch and to 100MHz as a amplifier.
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100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | LGE | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 300mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | LGE | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 300mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Epitaxial planar die construction.
- Complementary NPN type available MMBT2222A.
- Ideal for medium power amplification and switching.
Zastosowania
Tłumaczenie AI
- This device is designed as a general purpose amplifier and switching.
- The useful dynamic range extends to 600mA as a switch and to 100MHz as a amplifier.
C402271 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



