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onsemi FCD600N60Z

Produttore
onsemi
Cod. Prod.
FCD600N60Z
Cod. LCSC
C352876
Imballo
TO-252AA
Numero Cliente
Attr. chiave
89W 600V 7.4A 600mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS
Scheda Tecnicaonsemi FCD600N60Z
Conformità RoHS4 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-252AA
Output Capacitance(Coss)840pF
Ciss-Input Capacitance1.12nF
Pd - Power Dissipation89W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)7.4A
Reverse Transfer Capacitance (Crss)45pF
RDS(on)600mΩ@10V
Number1 N-channel
Gate Charge(Qg)26nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.5V
TypeN-Channel
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Descrizione

Traduzione AI

SuperFET II MOSFETs are a new family of high-voltage super junction (SJ) MOSFETs utilizing charge balance technology to deliver excellent low on-resistance and low gate charge performance. The technology is designed to minimize conduction losses while providing superior switching performance, dv/dt rate, and higher avalanche energy. As a result, SuperFET II MOSFETs are ideally suited for switching power supply applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications.

Caratteristiche

Traduzione AI
  • 650 V @ TJ = 150°C
  • Typical RDS(on) = 510 mΩ
  • Ultra-low gate charge (typical Qg = 20 nC)
  • Low effective output capacitance (typical Coss(eff.) = 74 pF)
  • 100% avalanche tested
  • Enhanced ESD capability
  • RoHS compliant

Applicazioni

Traduzione AI
  • LCD / LED / PDP TV and monitor backlighting
  • Solar inverters
  • AC-DC power supplies