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ROHM RAF040P01TCL

Producent
Nr części prod.
RAF040P01TCL
Nr LCSC
C3291397
Opak.
TUMT-3
Numer Klienta
Klucz. cechy
MOSFET P-CH 12V 4A TUMT-3
Karta KatalogowaROHM RAF040P01TCL
Zgodność z RoHS2 dokumentów dostępnych
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProducentROHM
Opak.TUMT-3
Drain to Source Voltage12V
Operating Temperature-
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)4A
Ciss-Input Capacitance4nF
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss)400pF
RDS(on)22mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)37nC@4.5V
Gate Threshold Voltage (Vgs(th))1V

Opis

Tłumaczenie AI

These P-Channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance and provide superior switching performance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits, where fast switching, low in-line power loss, and transient immunity are required.

Funkcje

Tłumaczenie AI
  • Low on-resistance
  • Low-voltage drive (1.5V drive)
  • Compact SMT package (TUMT3)

Zastosowania

Tłumaczenie AI
  • Switching applications