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Infineon IRF2807PBF

제조업체
제조사 품번
IRF2807PBF
LCSC 번호
C2560
포장
TO-220AB
고객 번호
주요 제원
MOSFET N-CH 75V 75A TO-220AB
데이터시트Infineon IRF2807PBF
RoHS 준수1개 문서 이용 가능
대체 부품5
모든 주문 보장
100% 정품 · 30일 반품 또는 교환

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체Infineon
포장TO-220AB
Output Capacitance(Coss)610pF
Ciss-Input Capacitance3.82nF
Pd - Power Dissipation230W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage75V
Current - Continuous Drain(Id)75A
Reverse Transfer Capacitance (Crss)130pF
RDS(on)13mΩ@10V
Number1 N-channel
Gate Charge(Qg)160nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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개요

AI 번역

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Q PowerMOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

주요 특징

AI 번역
  • Advanced Planar Technology
  • Low On-Resistance
  • Dynamic dV/dT Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified