onsemi FCP36N60N
| 제조업체 | |
| 제조사 품번 | FCP36N60N |
| LCSC 번호 | C899118 |
| 포장 | TO-220 |
| 고객 번호 | |
| 주요 제원 | 312W 600V 36A 81mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS |
| 데이터시트 | onsemi FCP36N60N |
| RoHS 준수 | 3개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 149pF | |
| Ciss-Input Capacitance | 3.595nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 36A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 81mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 149pF | |
| Ciss-Input Capacitance | 3.595nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 36A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 81mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
개요
SupreMOS MOSFET is a next-generation high-voltage super-junction (SJ) technology utilizing a deep-trench fill process, which distinguishes it from conventional SJ MOSFETs. This advanced technology combined with precise process control enables ultra-low specific on-resistance (Rsp), superior switching performance, and exceptional ruggedness. SupreMOS MOSFETs are suited for high-frequency switching power converter applications such as power factor correction (PFC), server/telecom power supplies, flat-panel TV power supplies, ATX power supplies, and industrial power applications.
주요 특징
- RDS(on) = 81 mΩ (typ.) at VGS = 10 V, ID = 18 A
- Ultra-low gate charge (typ. Qg = 86 nC)
- Low effective output capacitance (typ. Coss(eff.) = 361 pF)
- 100% avalanche tested
- RoHS compliant
응용 분야
- Solar Inverters
- AC-DC Power Supplies
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 149pF | |
| Ciss-Input Capacitance | 3.595nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 36A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 81mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 149pF | |
| Ciss-Input Capacitance | 3.595nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 36A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 81mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
개요
SupreMOS MOSFET is a next-generation high-voltage super-junction (SJ) technology utilizing a deep-trench fill process, which distinguishes it from conventional SJ MOSFETs. This advanced technology combined with precise process control enables ultra-low specific on-resistance (Rsp), superior switching performance, and exceptional ruggedness. SupreMOS MOSFETs are suited for high-frequency switching power converter applications such as power factor correction (PFC), server/telecom power supplies, flat-panel TV power supplies, ATX power supplies, and industrial power applications.
주요 특징
- RDS(on) = 81 mΩ (typ.) at VGS = 10 V, ID = 18 A
- Ultra-low gate charge (typ. Qg = 86 nC)
- Low effective output capacitance (typ. Coss(eff.) = 361 pF)
- 100% avalanche tested
- RoHS compliant
응용 분야
- Solar Inverters
- AC-DC Power Supplies
C899118 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| NTP082N65S3F | onsemi | 유사 제품 | TO-220 | 25 | $5.4977 $7.9676 | ||
| GBS65060TOA | GOSEMICON | 유사 제품 | TO-220 | 1 | $ 3.873 | ||
| FCP067N65S3 | onsemi | 유사 제품 | TO-220 | 100 | $ 10.2106 | ||
| MOT65R099A | MOT | 유사 제품 | TO-220 | 39 | $ 2.5738 | ||
| NTP067N65S3H | onsemi | 유사 제품 | TO-220 | 5 | $ 12.2806 |