onsemi FGH75T65SQDTL4

제조업체	onsemi
제조사 품번	FGH75T65SQDTL4
LCSC 번호	C898197
포장	TO-247-4
고객 번호
주요 제원	375W 75A 650V FS (Field Stop) TO-247-4 Single IGBTs RoHS
데이터시트	onsemi FGH75T65SQDTL4
RoHS 준수	4개 문서 이용 가능
대체 부품	5

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	onsemi
포장	TO-247-4
Td(off)	276ns
Pd - Power Dissipation	375W
Td(on)	44ns
Current - Collector(Ic)	75A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	14pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+175℃
Vce Saturation(VCE(sat))	1.6V
Collector Cut-Off Current (Ices)	250uA
Reverse Recovery Time(trr)	76ns
Switching Energy(Eoff)	266uJ
Turn-On Energy (Eon)	307uJ
Input Capacitance(Cies)	4.845nF
Gate Charge(Qg)	128nC@400V
Output Capacitance(Coes)	155pF

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	onsemi
포장	TO-247-4
Td(off)	276ns
Pd - Power Dissipation	375W
Td(on)	44ns
Current - Collector(Ic)	75A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	14pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+175℃
Vce Saturation(VCE(sat))	1.6V
Collector Cut-Off Current (Ices)	250uA
Reverse Recovery Time(trr)	76ns
Switching Energy(Eoff)	266uJ
Turn-On Energy (Eon)	307uJ
Input Capacitance(Cies)	4.845nF
Gate Charge(Qg)	128nC@400V
Output Capacitance(Coes)	155pF

모든 주문 보장

100% 정품 · 30일 반품 또는 교환

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	onsemi
포장	TO-247-4
Td(off)	276ns
Pd - Power Dissipation	375W
Td(on)	44ns
Current - Collector(Ic)	75A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	14pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+175℃
Vce Saturation(VCE(sat))	1.6V
Collector Cut-Off Current (Ices)	250uA
Reverse Recovery Time(trr)	76ns
Switching Energy(Eoff)	266uJ
Turn-On Energy (Eon)	307uJ
Input Capacitance(Cies)	4.845nF
Gate Charge(Qg)	128nC@400V
Output Capacitance(Coes)	155pF

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	onsemi
포장	TO-247-4
Td(off)	276ns
Pd - Power Dissipation	375W
Td(on)	44ns
Current - Collector(Ic)	75A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	14pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+175℃
Vce Saturation(VCE(sat))	1.6V
Collector Cut-Off Current (Ices)	250uA
Reverse Recovery Time(trr)	76ns
Switching Energy(Eoff)	266uJ
Turn-On Energy (Eon)	307uJ
Input Capacitance(Cies)	4.845nF
Gate Charge(Qg)	128nC@400V
Output Capacitance(Coes)	155pF