onsemi CPH3355-TL-W
| Hersteller | |
| Herst.-Teilenr. | CPH3355-TL-W |
| LCSC-Nr. | C890533 |
| Verp. | CPH-3 |
| Kundennummer | |
| Hauptmerkm. | CPH-3 Single Bipolar Transistors |
| Datenblatt | onsemi CPH3355-TL-W |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | CPH-3 |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi |
| Typ | Beschreibung | |
|---|---|---|
| Verp. | CPH-3 |
Beschreibung
This high-voltage MOSFET employs an advanced termination design that enhances voltage blocking capability without degrading performance over time. In addition, the MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy-efficient design also features a drain-source diode with fast recovery time. These devices are optimized for high-voltage, high-speed switching applications in power supplies, converters, and PWM motor control — particularly suited for bridge circuits with stringent requirements on diode speed and commutation safe operating area — while providing an additional safety margin against unexpected voltage transients.
Merkmale
- On-resistance RDS(on) = 120 mΩ (typical)
- 4V drive
- Halogen-free compliant
Anwendungen
- Power Supply
- Converters
- PWM Motor Control
- Bridge Circuits
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | CPH-3 |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi |
| Typ | Beschreibung | |
|---|---|---|
| Verp. | CPH-3 |
Beschreibung
This high-voltage MOSFET employs an advanced termination design that enhances voltage blocking capability without degrading performance over time. In addition, the MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy-efficient design also features a drain-source diode with fast recovery time. These devices are optimized for high-voltage, high-speed switching applications in power supplies, converters, and PWM motor control — particularly suited for bridge circuits with stringent requirements on diode speed and commutation safe operating area — while providing an additional safety margin against unexpected voltage transients.
Merkmale
- On-resistance RDS(on) = 120 mΩ (typical)
- 4V drive
- Halogen-free compliant
Anwendungen
- Power Supply
- Converters
- PWM Motor Control
- Bridge Circuits
C890533 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

