ST(Semtech) MMBT7002D
| Producent | ST(Semtech)Asian Brands |
| Nr części prod. | MMBT7002D |
| Nr LCSC | C7464228 |
| Opak. | SOT-26 |
| Numer Klienta | |
| Klucz. cechy | 60V 115mA 200mW 7.5Ω@10V 1 N-channel SOT-26 Single FETs, MOSFETs |
| Karta Katalogowa | ST(Semtech) MMBT7002D |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST(Semtech) | |
| Opak. | SOT-26 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST(Semtech) | |
| Opak. | SOT-26 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 115mA |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switching
- High saturation current capability
- High-speed switching
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST(Semtech) | |
| Opak. | SOT-26 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST(Semtech) | |
| Opak. | SOT-26 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 115mA |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switching
- High saturation current capability
- High-speed switching
C7464228 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

