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Modelos EDAEasyEDA
Transphorm TP90H180PS
| Fabricante | |
| N.º de pieza fab. | TP90H180PS |
| Nº LCSC | C7401588 |
| Emb. | TO-220AB |
| Número de Cliente | |
| Atrib. clave | 900V 15A 78W 205mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS |
| Hoja de Datos | Transphorm TP90H180PS |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 780pF | |
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 780pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
TP90H180PS is a 900V, 170mΩ GaN FET in a normally-off configuration. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency by reducing gate charge, minimizing crossover losses, and lowering reverse recovery charge.
Características
Traducción por IA
- JEDEC-qualified GaN technology
- Production-tested dynamic on-resistance (RDS(on) eff)
- Robust design, featuring:
- Intrinsic lifetime testing
- Wide gate safe operating margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant and halogen-free package
Aplicaciones
Traducción por IA
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 26.8545 | $ 26.85 |
| 200+ | $ 10.7155 | $ 2143.10 |
| 500+ | $ 10.3578 | $ 5178.90 |
| 1,000+ | $ 10.1805 | $ 10180.50 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 780pF | |
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 780pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
TP90H180PS is a 900V, 170mΩ GaN FET in a normally-off configuration. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency by reducing gate charge, minimizing crossover losses, and lowering reverse recovery charge.
Características
Traducción por IA
- JEDEC-qualified GaN technology
- Production-tested dynamic on-resistance (RDS(on) eff)
- Robust design, featuring:
- Intrinsic lifetime testing
- Wide gate safe operating margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant and halogen-free package
Aplicaciones
Traducción por IA
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| STP21N90K5 | ST | Similares | TO-220 | 930 | $ 3.8569 | ||
| IPP90R340C3 | Infineon | Similares | TO-220 | 38 | $ 5.0246 | ||
| MS20N85ICT0 | MASPOWER | Similares | TO-220 | 50 | $ 1.9562 | ||
| IXFP14N85XM | Littelfuse/IXYS | Similares | TO-220 | 160 | $ 4.6643 | ||
| STP20N90K5 | ST | Similares | TO-220 | 0 | $ 11.5646 |