Zdjęcia poglądowe
Modele EDAEasyEDA
DIODES ZXMN3B01FTC
| Producent | |
| Nr części prod. | ZXMN3B01FTC |
| Nr LCSC | C7170673 |
| Opak. | SOT-23-3 |
| Numer Klienta | |
| Klucz. cechy | 625mW 30V 2A 150mΩ@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | DIODES ZXMN3B01FTC |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 258pF | |
| Pd - Power Dissipation | 625mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.93nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 258pF | |
| Pd - Power Dissipation | 625mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.93nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This new generation of Trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Funkcje
Tłumaczenie AI
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Zastosowania
Tłumaczenie AI
- DC-DC Converters
- Power Management functions
- Disconnect switches
- Motor control
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4219 | $ 0.42 |
| 200+ | $ 0.1684 | $ 33.68 |
| 500+ | $ 0.1627 | $ 81.35 |
| 1,000+ | $ 0.16 | $ 160.00 |
Standardowa Obudowa10000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 258pF | |
| Pd - Power Dissipation | 625mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.93nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 258pF | |
| Pd - Power Dissipation | 625mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.93nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This new generation of Trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Funkcje
Tłumaczenie AI
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Zastosowania
Tłumaczenie AI
- DC-DC Converters
- Power Management functions
- Disconnect switches
- Motor control
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| ZXMN3B01FTA | DIODES | Podobne | SOT-23 | 7,565 | $ 0.1349 | ||
| RTR025N05TL | ROHM | Podobne | SOT-346 | 225 | $ 0.1811 | ||
| RQ5H025TNTL | ROHM | Podobne | SC-96 | 51 | $ 0.5853 | ||
| BM3402 | BORN | Podobne | SOT-23 | 5,620 | $ 0.0482 | ||
| AO3402 | SEP | Podobne | SOT-23 | 2,950 | $ 0.0202 |