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Hangzhou Silan Microelectronics SVF4N65F

Produttore
Hangzhou Silan MicroelectronicsAsian Brands
Cod. Prod.
SVF4N65F
Cod. LCSC
C68774
Imballo
TO-220F-3
Numero Cliente
Attr. chiave
MOSFET N-CH 650V 4A TO-220F-3
Scheda TecnicaHangzhou Silan Microelectronics SVF4N65F
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreHangzhou Silan Microelectronics
ImballoTO-220F-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)4A
Ciss-Input Capacitance430pF
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss)4.1pF
RDS(on)2.3Ω@10V
Number1 N-channel
Gate Charge(Qg)13nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Descrizione

Traduzione AI

SVF4N65F/M/MJ/D is an N-channel enhancement-mode power MOSFET fabricated using Silicon Expert's proprietary F-Cell structured VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.

Caratteristiche

Traduzione AI
  • 4A, 650V, R DS(on)(typ) = 2.3 Ω at VGS = 10V
  • Low gate charge
  • Low Crss
  • Fast switching
  • Improved dv/dt capability

Applicazioni

Traduzione AI
  • AC-DC power supplies
  • DC-DC converters
  • H-bridge PWM motor drivers