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VISHAY SIHP28N65E-GE3

제조업체
VISHAY
제조사 품번
SIHP28N65E-GE3
LCSC 번호
C6488248
포장
TO-220AB
고객 번호
주요 제원
250W 650V 18A 112mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs
데이터시트VISHAY SIHP28N65E-GE3
대체 부품5
모든 주문 보장
100% 정품 · 30일 반품 또는 교환

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체VISHAY
포장TO-220AB
Output Capacitance(Coss)160pF
Ciss-Input Capacitance3.405nF
Pd - Power Dissipation250W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)18A
Reverse Transfer Capacitance (Crss)4pF
RDS(on)112mΩ@10V
Number1 N-channel
Gate Charge(Qg)140nC@10V
Vgs±30V
TypeN-Channel
Gate Threshold Voltage (Vgs(th))4V
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개요

AI 번역

The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The D²PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It delivers the highest power capability and lowest possible on-resistance of any available surface-mount package. Due to its low internal connection resistance, the D²PAK (TO-263) is suitable for high-current applications, capable of dissipating up to 2.0 W of power in typical SMT applications.

주요 특징

AI 번역
  • Low figure of merit (FOM) Ron × Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra-low gate charge (Qg)
  • Avalanche energy rated (UIS)

응용 분야

AI 번역
  • Server and telecom power supplies
  • Switched-mode power supplies (SMPS)
  • Power factor correction (PFC) supplies
  • Lighting
  • High-intensity discharge (HID) lamps
  • Fluorescent lamp ballast lighting
  • Industrial applications
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Renewable energy
  • Solar (photovoltaic inverters)