MICROCHIP 25AA160DT-E/MNY
| Produttore | |
| Cod. Prod. | 25AA160DT-E/MNY |
| Cod. LCSC | C616518 |
| Imballo | TDFN-8-EP(3x3) |
| Numero Cliente | |
| Attr. chiave | 16Kbit 10MHz SPI TDFN-8-EP(3x3) Memory |
| Scheda Tecnica | MICROCHIP 25AA160DT-E/MNY |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | TDFN-8-EP(3x3) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA | |
| Clock Frequency | 10MHz | |
| Access Time | 50ns;100ns;160ns | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Interface | SPI | |
| Write Cycle Endurance | 1,000,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | TDFN-8-EP(3x3) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 10MHz | |
| Access Time | 50ns;100ns;160ns | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Interface | SPI | |
| Write Cycle Endurance | 1,000,000 cycles |
Descrizione
The 25XX160C/D are 16-Kbit Serial Electrically Erasable PROMs (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
Caratteristiche
- 10 MHz Maximum Clock Speed
- Low-Power CMOS Technology
- Maximum Write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5 μA at 5.5V
- 2048x8-bit Organization
- 16-Byte Page ("C" version devices)
- 32-Byte Page ("D" version devices)
- Self-Timed Erase and Write Cycles (5 ms maximum)
- Block Write Protection: Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
- Sequential Read
- High Reliability
- Endurance: >1M erase/write cycles
- Data retention: >200 years
- ESD protection: >4000V
- Temperature Ranges Supported
- Industrial (I): -40℃ to +85℃
- Extended (E): -40℃ to +125℃
- RoHS Compliant
- Automotive AEC-Q100 Qualified
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | TDFN-8-EP(3x3) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA | |
| Clock Frequency | 10MHz | |
| Access Time | 50ns;100ns;160ns | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Interface | SPI | |
| Write Cycle Endurance | 1,000,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | TDFN-8-EP(3x3) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 10MHz | |
| Access Time | 50ns;100ns;160ns | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Interface | SPI | |
| Write Cycle Endurance | 1,000,000 cycles |
Descrizione
The 25XX160C/D are 16-Kbit Serial Electrically Erasable PROMs (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
Caratteristiche
- 10 MHz Maximum Clock Speed
- Low-Power CMOS Technology
- Maximum Write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5 μA at 5.5V
- 2048x8-bit Organization
- 16-Byte Page ("C" version devices)
- 32-Byte Page ("D" version devices)
- Self-Timed Erase and Write Cycles (5 ms maximum)
- Block Write Protection: Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
- Sequential Read
- High Reliability
- Endurance: >1M erase/write cycles
- Data retention: >200 years
- ESD protection: >4000V
- Temperature Ranges Supported
- Industrial (I): -40℃ to +85℃
- Extended (E): -40℃ to +125℃
- RoHS Compliant
- Automotive AEC-Q100 Qualified
C616518 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |