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MICROCHIP 25LC1024T-I/MF

Producent
Nr części prod.
25LC1024T-I/MF
Nr LCSC
C612309
Opak.
DFN-8-EP(5x6)
Numer Klienta
Klucz. cechy
1-Mbit SPI Bus Serial EEPROM
Karta KatalogowaMICROCHIP 25LC1024T-I/MF
Zgodność z RoHS1 dokumentów dostępnych
Części alternatywne5
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Memory/Memory
ProducentMICROCHIP
Opak.DFN-8-EP(5x6)
Operating Temperature-40℃~+85℃
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size1Mbit
Voltage - Supply2.5V~5.5V;10mA
Clock Frequency20MHz
Access Time50ns
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)6ms
Standby Supply Current20uA
InterfaceSPI
Write Cycle Endurance1,000,000 cycles

Opis

Tłumaczenie AI

The 25LC1024 is a 1024-Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase instructions typically associated with Flash-based products. These instructions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Funkcje

Tłumaczenie AI
  • 20 MHz Maximum Clock Speed
  • Byte and Page-Level Write Operations: 256-byte page 6 ms maximum write cycle time - No page or sector erase required
  • Low-Power CMOS Technology:
    • Maximum Write current: 5 mA at 5.5V, 20 MHz
    • Read current: 7 mA at 5.5V, 20 MHz
    • Standby current: 1 μA at 2.5V (Deep power-down)
  • Electronic Signature for Device ID
  • Self-Timed Erase and Write Cycles:
    • Page Erase (6 ms maximum)
    • Sector Erase (10 ms maximum)
    • Chip Erase (10 ms maximum)
  • Sector Write Protection (32K byte/sector):
    • Protect none, 1/4, 1/2 or all of array
  • Built-In Write Protection:
    • Power-on/off data protection circuitry
    • Write enable latch
    • Write-protect pin
  • High Reliability:
    • Endurance: 1M erase/write cycles
    • Data Retention: > 200 years
    • ESD Protection: > 4000V
  • Temperature Ranges Supported:
    • Industrial (I): -40℃ to +85℃
    • Extended (E): -40℃ to +125℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified