VBsemi Elec APM2701ACC-TRG-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | APM2701ACC-TRG-VB |
| Nº LCSC | C558090 |
| Emb. | TSOP-6 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH+P-CH ARR 20V 5.5A TSOP-6 |
| Hoja de Datos | VBsemi Elec APM2701ACC-TRG-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A | |
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | N-Channel + P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | N-Channel + P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A | |
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | N-Channel + P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | N-Channel + P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
C558090 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



