Nexperia BUK7Y15-100EX
| Producent | |
| Nr części prod. | BUK7Y15-100EX |
| Nr LCSC | C549909 |
| Opak. | SOT-669 |
| Numer Klienta | |
| Klucz. cechy | 195W 100V 68A 10mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Nexperia BUK7Y15-100EX |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 283pF | |
| Ciss-Input Capacitance | 3.958nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 68A | |
| Reverse Transfer Capacitance (Crss) | 195pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 54.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 283pF | |
| Ciss-Input Capacitance | 3.958nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 68A | |
| Reverse Transfer Capacitance (Crss) | 195pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 54.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Standard-level N-channel MOSFET using TrenchMOS technology in LFPAK56 (Power SO8) package. Designed and qualified to AEC Q101 standard for high-performance automotive applications.
Funkcje
Tłumaczenie AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C temperature rating for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Zastosowania
Tłumaczenie AI
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 283pF | |
| Ciss-Input Capacitance | 3.958nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 68A | |
| Reverse Transfer Capacitance (Crss) | 195pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 54.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 283pF | |
| Ciss-Input Capacitance | 3.958nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 68A | |
| Reverse Transfer Capacitance (Crss) | 195pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 54.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Standard-level N-channel MOSFET using TrenchMOS technology in LFPAK56 (Power SO8) package. Designed and qualified to AEC Q101 standard for high-performance automotive applications.
Funkcje
Tłumaczenie AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C temperature rating for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Zastosowania
Tłumaczenie AI
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
C549909 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

