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Infineon IPD70R2K0CE

Hersteller
Infineon
Herst.-Teilenr.
IPD70R2K0CE
LCSC-Nr.
C536867
Verp.
TO-252-3
Kundennummer
Hauptmerkm.
42W 700V 2.6A 2Ω@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS
DatenblattInfineon IPD70R2K0CE
RoHS-Konformität1 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerInfineon
Verp.TO-252-3
Output Capacitance(Coss)14pF
Ciss-Input Capacitance163pF
Pd - Power Dissipation42W
Configuration-
Operating Temperature-40℃~+150℃
Drain to Source Voltage700V
Current - Continuous Drain(Id)2.6A
Reverse Transfer Capacitance (Crss)33pF
RDS(on)2Ω@10V
Number1 N-channel
Gate Charge(Qg)7.8nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.5V
TypeN-Channel
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Beschreibung

KI-Übersetzung

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-optimized platform that meets the highest efficiency standards while targeting cost-sensitive applications in the consumer and lighting markets. This new series delivers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, offering the best cost-reduction performance ratio on the market.

Merkmale

KI-Übersetzung
  • Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
  • Extremely high commutation robustness
  • Easy to use/drive
  • Lead-free plating, halogen-free mold compound
  • Suitable for standard grade applications

Anwendungen

KI-Übersetzung
  • (QR) flyback circuits in low-power chargers for mobile devices and power tools